Invention Grant
US08873290B2 Non-volatile memory device capable of multi-page programming by simultaneously activating a plurality of selection lines based on programmed data
有权
能够通过基于编程数据同时激活多个选择线的能够进行多页编程的非易失性存储器件
- Patent Title: Non-volatile memory device capable of multi-page programming by simultaneously activating a plurality of selection lines based on programmed data
- Patent Title (中): 能够通过基于编程数据同时激活多个选择线的能够进行多页编程的非易失性存储器件
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Application No.: US14225601Application Date: 2014-03-26
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Publication No.: US08873290B2Publication Date: 2014-10-28
- Inventor: Kyoung Lae Cho , Heeseok Eun , Junjin Kong
- Applicant: SAMSUNG Electronics Co., Ltd
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2010-0057265 20100616
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34
Abstract:
A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.
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