Invention Grant
US08873291B2 Non-volatile memory device with single-polysilicon-layer memory cells
有权
具有单多晶硅层存储单元的非易失性存储器件
- Patent Title: Non-volatile memory device with single-polysilicon-layer memory cells
- Patent Title (中): 具有单多晶硅层存储单元的非易失性存储器件
-
Application No.: US13926280Application Date: 2013-06-25
-
Publication No.: US08873291B2Publication Date: 2014-10-28
- Inventor: Fabrizio Torricelli , Luigi Colalongo , Anna Richelli , Zsolt Kovàcs-Vajna
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITTO2012A0559 20120625
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L29/423 ; H01L29/788 ; G11C16/04

Abstract:
An embodiment of a nonvolatile-memory device includes: a body accommodating at least a first semiconductor well and a second semiconductor well; an insulating structure; and at least one nonvolatile memory cell. The cell includes: at least one first control region in the first well; conduction regions in the second well; and a floating gate region, which extends over portions of the first well and of the second well, is capacitively coupled to the first control region and forms a floating-gate memory transistor with the conduction regions. The insulating structure includes: first insulating regions, which separate the floating gate region from the first control region and from the second well outside the conduction regions and have a first thickness; and second insulating regions, which separate the floating gate region from the first well outside the first control region and have a second thickness greater than the first thickness.
Public/Granted literature
- US20130343128A1 NON-VOLATILE MEMORY DEVICE WITH SINGLE-POLYSILICON-LAYER MEMORY CELLS Public/Granted day:2013-12-26
Information query