发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US13417503申请日: 2012-03-12
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公开(公告)号: US08873330B2公开(公告)日: 2014-10-28
- 发明人: Fumihiro Kono , Kiyotaro Itagaki
- 申请人: Fumihiro Kono , Kiyotaro Itagaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-208162 20110922
- 主分类号: G11C8/00
- IPC分类号: G11C8/00 ; G06F13/16 ; G11C16/08 ; G11C16/04
摘要:
A plurality of address conversion circuits are provided for memory cores respectively, and convert logical address data supplied from outside to physical address data. In an interleave operation, the address conversion circuits output the logical address data as the physical address data without converting the logical address data when a first memory core is to be accessed earlier than a second memory core, whereas output address data obtained by adding a certain value to the logical address data as the physical address data when the second memory core is to be accessed earlier than the first memory core.
公开/授权文献
- US20130077401A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2013-03-28