Invention Grant
US08877538B2 Pressure sensor having nanostructure and manufacturing method thereof
有权
具有纳米结构的压力传感器及其制造方法
- Patent Title: Pressure sensor having nanostructure and manufacturing method thereof
- Patent Title (中): 具有纳米结构的压力传感器及其制造方法
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Application No.: US13686375Application Date: 2012-11-27
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Publication No.: US08877538B2Publication Date: 2014-11-04
- Inventor: Jin Seok Kim , Jun-Kyo Francis Suh , Sung Chul Kang , Jeong Hoon Lee
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR10-2011-0128939 20111205
- Main IPC: H01L21/00
- IPC: H01L21/00 ; A61B5/03 ; H01L29/66 ; H01L29/84 ; B82Y15/00 ; G01L7/08 ; B82Y99/00
Abstract:
The present disclosure relates to a pressure sensor having a nanostructure and a method for manufacturing the same. More particularly, it relates to a pressure sensor having a nanostructure attached on the surface of the pressure sensor and thus having improved sensor response time and sensitivity and a method for manufacturing the same. The pressure sensor according to the present disclosure having a nanostructure includes: a substrate; a source electrode and a drain electrode arranged on the substrate with a predetermined spacing; a flexible sensor layer disposed on the source electrode and the drain electrode; and a nanostructure attached on the surface of the flexible sensor layer and having nanosized wrinkles.
Public/Granted literature
- US20130140611A1 PRESSURE SENSOR HAVING NANOSTRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-06-06
Information query
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