发明授权
- 专利标题： Methods of manufacturing finFET devices
- 专利标题（中）： 制造finFET器件的方法
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申请号： US13431770申请日： 2012-03-27
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公开(公告)号： US08877615B2公开(公告)日： 2014-11-04
- 发明人: Veeraraghavan S. Basker , David V. Horak , Hemanth Jagannathan , Charles W. Koburger, III
- 申请人： Veeraraghavan S. Basker , David V. Horak , Hemanth Jagannathan , Charles W. Koburger, III
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joe Abate
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L29/66 ; H01L21/8238 ; H01L29/78
摘要：
A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.
公开/授权文献
- US20120190179A1 METHODS OF MANUFACTURING FINFET DEVICES 公开/授权日：2012-07-26
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