Invention Grant
- Patent Title: Method for fabricating MOS transistor
- Patent Title (中): 制造MOS晶体管的方法
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Application No.: US13913535Application Date: 2013-06-10
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Publication No.: US08877635B2Publication Date: 2014-11-04
- Inventor: Kuo-Chih Lai , Nien-Ting Ho , Shu Min Huang , Bor-Shyang Liao , Chia Chang Hsu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/285 ; H01L21/02 ; H01L29/66 ; H01L21/28 ; H01L21/324
Abstract:
A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.
Public/Granted literature
- US20130273736A1 METHOD FOR FABRICATING MOS TRANSISTOR Public/Granted day:2013-10-17
Information query
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