Invention Grant
US08877653B2 Substrate processing method and substrate processing apparatus 有权
基板处理方法和基板处理装置

Substrate processing method and substrate processing apparatus
Abstract:
A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0