公开(公告)号：US08883026B2

公开(公告)日：2014-11-11

申请号：US13687454

申请日：2012-11-28

Applicant: Dainippon Screen Mfg. Co., Ltd.

Inventor： Takashi Ota ,  Yuya Akanishi ,  Akio Hashizume

IPC: C03C15/00 ,  H01L21/67 ,  B44C1/22 ,  H01L21/311

CPC classification number: B05C5/0225 ,  B05C9/06 ,  B05C9/12 ,  B05C9/14 ,  B44C1/227 ,  H01L21/31116 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67207

Abstract: A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.

Abstract translation: 基板处理方法包括从基板除去水的除水步骤，在除水步骤之后向基板供给甲硅烷基化剂的甲硅烷化工序，以及在甲硅烷化工序后向基板供给蚀刻剂的蚀刻工序。 基板可以具有暴露氮化物膜和氧化膜的表面，并且在这种情况下，蚀刻步骤可以是通过蚀刻剂选择性地蚀刻氮化物膜的选择性蚀刻步骤。 蚀刻剂可以以具有蚀刻成分的蒸汽的形式供给。

公开(公告)号：US08877653B2

公开(公告)日：2014-11-04

申请号：US13729069

申请日：2012-12-28

Applicant: Dainippon Screen Mfg. Co., Ltd.

Inventor： Takahiro Yamaguchi ,  Akio Hashizume ,  Yuya Akanishi ,  Takashi Ota

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/00 ,  B44C1/22

CPC classification number: B44C1/227 ,  H01L21/00 ,  H01L21/31116 ,  H01L21/67017 ,  H01L21/6719

Abstract: A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

Abstract translation: 将含有能够溶解氟化氢的溶剂材料的溶剂蒸气供给到基板的表面，从而用含有溶剂材料的液体膜覆盖基板的表面。 此后，将含有氟化氢的蚀刻蒸气供给到由含有溶剂材料的液膜覆盖的基板的表面，从而蚀刻基板的表面。

公开(公告)号：US09364873B2

公开(公告)日：2016-06-14

申请号：US14039695

申请日：2013-09-27

Applicant: DAINIPPON SCREEN MFG. CO., LTD.

Inventor： Taiki Hinode ,  Akio Hashizume ,  Takashi Ota

IPC: H01L21/306 ,  H01L21/311 ,  C09K13/04 ,  C09K5/14 ,  B08B7/00 ,  H01L21/4757 ,  C11D3/37 ,  C11D7/08 ,  C11D11/00 ,  H01L21/67 ,  H01L21/687

CPC classification number: B08B7/0071 ,  C09K5/14 ,  C09K13/04 ,  C11D3/373 ,  C11D7/08 ,  C11D11/0041 ,  C11D11/0047 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/47573 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/68742

Abstract: The inventive substrate treatment apparatus includes a spin chuck which horizontally holds and rotates a wafer; a heater which is disposed in opposed relation to a lower surface of the wafer held by the spin chuck and heats the wafer from a lower side; a phosphoric acid nozzle which spouts a phosphoric acid aqueous solution to a front surface (upper surface) of the wafer held by the spin chuck; and a suspension liquid nozzle which spouts a silicon suspension liquid to the front surface of the wafer held by the spin chuck. The wafer is maintained at a higher temperature on the order of 300° C. and, in this state, a liquid mixture of the phosphoric acid aqueous solution and the silicon suspension liquid is supplied to the front surface of the wafer.

Abstract translation: 本发明的基板处理装置包括水平保持和旋转晶片的旋转卡盘; 加热器，其与由旋转卡盘保持的晶片的下表面相对设置，并从下侧加热晶片; 将磷酸水溶液喷射到由旋转卡盘保持的晶片的前表面（上表面）的磷酸喷嘴; 以及悬浮液喷嘴，其将硅悬浮液喷射到由旋转卡盘保持的晶片的前表面。 将晶片保持在300℃的较高温度，在该状态下，将磷酸水溶液和硅悬浮液的液体混合物供给到晶片的前表面。

公开(公告)号：US08821741B2

公开(公告)日：2014-09-02

申请号：US13687503

申请日：2012-11-28

Applicant: Dainippon Screen Mfg. Co., Ltd.

Inventor： Takashi Ota ,  Akio Hashizume ,  Takahiro Yamaguchi ,  Yuya Akanishi

IPC: C03C15/00

CPC classification number: B44C1/227 ,  H01L21/31116 ,  H01L21/67017 ,  H01L21/6719

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract translation: 一种用于将惰性气体供给到其中设置有基板的封闭空间中，同时通过吸出封闭空间排出气体的预处理步骤。 然后，进行蚀刻步骤，用于将处理蒸汽供应到封闭空间中，同时以低于预处理步骤中的速率的速率从封闭空间排出气体。 然后进行后处理步骤，用于通过以比蚀刻步骤中的速率高的速率吸出封闭空间而将惰性气体供应到封闭空间中，同时排出气体。