发明授权
- 专利标题： Multiple Vt field-effect transistor devices
- 专利标题（中）： 多Vt场效应晶体管器件
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申请号： US13346165申请日： 2012-01-09
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公开(公告)号： US08878298B2公开(公告)日： 2014-11-04
- 发明人: Josephine B. Chang , Leland Chang , Renee T. Mo , Vijay Narayanan , Jeffrey W. Sleight
- 申请人： Josephine B. Chang , Leland Chang , Renee T. Mo , Vijay Narayanan , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Michael J. Chang, LLC
- 代理商 Vazken Alexanian
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a drain region; at least one channel interconnecting the source and drain regions; and a gate, surrounding at least a portion of the channel, configured to have multiple threshold voltages due to the selective placement of at least one band edge metal throughout the gate.
公开/授权文献
- US20120175712A1 Multiple Vt Field-Effect Transistor Devices 公开/授权日：2012-07-12
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