Invention Grant
US08879318B2 Method of storing data in nonvolatile memory device and method of operating nonvolatile memory device
有权
在非易失性存储器件中存储数据的方法和操作非易失性存储器件的方法
- Patent Title: Method of storing data in nonvolatile memory device and method of operating nonvolatile memory device
- Patent Title (中): 在非易失性存储器件中存储数据的方法和操作非易失性存储器件的方法
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Application No.: US13545127Application Date: 2012-07-10
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Publication No.: US08879318B2Publication Date: 2014-11-04
- Inventor: Jung-Ro Ahn , Bong-Yong Lee , Hae-Bum Lee , Eui-Do Kim , Houng-Kuk Jang , Kyung-Jun Shin , Tae-Hyun Yoon
- Applicant: Jung-Ro Ahn , Bong-Yong Lee , Hae-Bum Lee , Eui-Do Kim , Houng-Kuk Jang , Kyung-Jun Shin , Tae-Hyun Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0068743 20110712
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34
Abstract:
In a method of storing data in a nonvolatile memory device, a program operation is performed on target memory cells among a plurality of memory cells based on a program voltage. A verification operation is performed on the target memory cells based on a verification voltage to determine whether all of the target memory cells are completely programmed. The verification voltage is changed depending on the program operation.
Public/Granted literature
- US20130016558A1 METHOD OF STORING DATA IN NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE Public/Granted day:2013-01-17
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