Invention Grant
- Patent Title: Light emitting semiconductor element and method of manufacturing the same
- Patent Title (中): 发光半导体元件及其制造方法
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Application No.: US13604021Application Date: 2012-09-05
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Publication No.: US08882313B2Publication Date: 2014-11-11
- Inventor: Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
- Applicant: Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
- Applicant Address: TW
- Assignee: Delta Electronics, Inc.
- Current Assignee: Delta Electronics, Inc.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Priority: TW101118299A 20120523
- Main IPC: F21V19/00
- IPC: F21V19/00
Abstract:
A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.
Public/Granted literature
- US20130314931A1 LIGHT EMITTING SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-11-28
Information query
