发明授权
- 专利标题： Light emitting semiconductor element and method of manufacturing the same
- 专利标题（中）： 发光半导体元件及其制造方法
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申请号： US13604021申请日： 2012-09-05
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公开(公告)号： US08882313B2公开(公告)日： 2014-11-11
- 发明人: Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
- 申请人： Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
- 申请人地址： TW
- 专利权人： Delta Electronics, Inc.
- 当前专利权人： Delta Electronics, Inc.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 优先权： TW101118299A 20120523
- 主分类号： F21V19/00
- IPC分类号： F21V19/00
摘要：
A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.
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