-
公开(公告)号：US09173266B2
公开(公告)日：2015-10-27
申请号：US13551854
申请日：2012-07-18
申请人： Wen-Chia Liao , Li-Fan Lin , Ching-Chuan Shiue , Shih-Peng Chen
发明人： Wen-Chia Liao , Li-Fan Lin , Ching-Chuan Shiue , Shih-Peng Chen
IPC分类号： H01L33/50 , H05B33/08 , F21Y101/02 , F21Y103/00 , F21Y113/00
CPC分类号： H05B33/0857 , F21Y2103/10 , F21Y2113/13 , F21Y2115/10
摘要： An illumination apparatus includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. The light emitted from the third light-emitting device is selectively mixed with the light emitted from the first light-emitting device or the second light-emitting device to form a white light having a chromaticity coordinate point substantially located on a Black Body Locus. A color of the light emitted from the third light-emitting device is determined by linear relationships between chromaticity coordinate points corresponding to wavelengths of the lights emitted form the first light-emitting device and the second light-emitting device and corresponding to a color temperature of the white light. A method for generating a white light is also disclosed herein.
摘要翻译： 照明装置包括第一发光装置，第二发光装置和第三发光装置。 从第三发光装置发射的光与从第一发光装置或第二发光装置发射的光有选择地混合，以形成具有基本上位于黑体轨迹上的色度坐标点的白光。 从第三发光装置发出的光的颜色由对应于从第一发光装置和第二发光装置发射的光的波长的色度坐标点之间的线性关系确定，并且对应于 白光。 本文还公开了产生白光的方法。
-
公开(公告)号：US08882313B2
公开(公告)日：2014-11-11
申请号：US13604021
申请日：2012-09-05
申请人： Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
发明人： Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
IPC分类号： F21V19/00
CPC分类号： H01L25/0753 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/19107 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.
摘要翻译： 发光半导体元件至少包括两个导电单元，至少一个发光半导体管芯和透光层。 凹槽位于两个导电单元之间。 发光半导体管芯横跨导电单元。 透光层覆盖发光半导体，并部分地填充在沟槽内，用于连接导电单元。
-
3.发明申请LIGHT EMITTING DIODE ELEMENT, METHOD OF FABRICATION AND LIGHT EMITTING DEVICE 审中-公开发光二极管元件，制造方法和发光装置公开(公告)号：US20120326173A1
公开(公告)日：2012-12-27
申请号：US13364963
申请日：2012-02-02
申请人： Wen-Chia LIAO , Li-Fan Lin , Ching-Chuan Shiue , Shih-Peng Chen
发明人： Wen-Chia LIAO , Li-Fan Lin , Ching-Chuan Shiue , Shih-Peng Chen
CPC分类号： H01L33/38 , H01L33/382 , H01L33/385 , H01L33/44
摘要： A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located on an opposite surface of the light emitting active layer. The first electrode is provided adjacent to and electrically connect to the first semiconductor layer. The second electrode is provided adjacent to and electrically connect to the second semiconductor layer. In addition, a method of fabricating LED element and a light emitting device having the LED elements are provided.
摘要翻译： 发光二极管包括多层半导体，第一电极和第二电极。 多层半导体具有基本上垂直于预定表面的发光有源层，位于发光有源层的表面上的第一半导体层和位于发光有源层的相对表面上的第二半导体层。 第一电极被设置成与第一半导体层相邻并电连接。 第二电极设置成与第二半导体层相邻并电连接。 此外，提供了制造LED元件的方法和具有LED元件的发光器件。
-
公开(公告)号：US20110285319A1
公开(公告)日：2011-11-24
申请号：US13041896
申请日：2011-03-07
申请人： Yung-Hsiang Chao , Wen-Chia Liao , Ching-Chuan Shiue , Shih-Peng Chen , Horng-Jou Wang , Kun-Yueh Lin , Jia-Long Fang
发明人： Yung-Hsiang Chao , Wen-Chia Liao , Ching-Chuan Shiue , Shih-Peng Chen , Horng-Jou Wang , Kun-Yueh Lin , Jia-Long Fang
IPC分类号： H05B37/02
CPC分类号： H05B33/0818 , H05B33/0812
摘要： A light source module is provided. The light source module includes a full wave rectifier, a constant current output integrated circuit (IC) and at least one high operating voltage light emitting diode (HVLED) die coupled between the constant current output IC and a ground. The full wave rectifier generates a rectified signal according to an alternating current (AC) power. The constant current output IC outputs a constant current signal according to the rectified signal. A brightness of the HVLED die is determined by the constant current signal.
摘要翻译： 提供光源模块。 光源模块包括全波整流器，恒流输出集成电路（IC）和耦合在恒流输出IC和地之间的至少一个高工作电压发光二极管（HVLED）管芯。 全波整流器根据交流（AC）功率产生整流信号。 恒流输出IC根据整流信号输出恒流信号。 HVLED管芯的亮度由恒定电流信号决定。
-
公开(公告)号：US20120281417A1
公开(公告)日：2012-11-08
申请号：US13448535
申请日：2012-04-17
申请人： Ghing-Cherng Sun , Shih-Peng Chen , Ching-Chuan Shiue , Li-Fan Lin , Shuang-Chao Chung , Shuang-Hau Yang
发明人： Ghing-Cherng Sun , Shih-Peng Chen , Ching-Chuan Shiue , Li-Fan Lin , Shuang-Chao Chung , Shuang-Hau Yang
CPC分类号： H01L33/60 , H01L33/58 , H01L2224/73265
摘要： A highly directional light source device, more specifically, a light emitting element electrically connected on a substrate to produce light, and one interior having a photon recycler with a reflective surface, covered and set on one side of this substrate, and an opening set in the center of the top of the cover which corresponds with the light emitting element, thereby allowing the light from the light emitting element to be directly emitted out the opening, and then to be reflected back to the light emitting element through the reflective surface of the photon recycler, and after light is reflected or refracted according to the structure of the light emitting element, again through the opening the light is emitted onto the photon recycler, thereby achieving increased Étendue of the highly directional light source device and achieving the goal of effective light emission.
摘要翻译： 高度定向的光源装置，更具体而言，电连接在基板上以产生光的发光元件，以及一个具有反射表面的光子回收器的内部，被覆盖并设置在该基板的一侧上， 与发光元件对应的盖的顶部的中心，从而允许来自发光元件的光直接从开口发射出来，然后通过反射表面反射回发光元件 光子回收器，并且根据发光元件的结构在光被反射或折射之后，再次通过开口将光发射到光子回收器上，从而实现高定向光源装置的增加，并实现有效的目标 发光。
-
公开(公告)号：US20080283859A1
公开(公告)日：2008-11-20
申请号：US12057887
申请日：2008-03-28
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/22 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译： 发光二极管（LED）装置包括外延多层，微/纳粗糙层和抗反射层。 外延层多层具有第一半导体层，有源层和第二半导体层。 微/纳米坚固层设置在外延多层的第一半导体层上。 防反射层设置在微/纳米坚固层上。 此外，还公开了一种LED装置的制造方法。
-
公开(公告)号：US20080142825A1
公开(公告)日：2008-06-19
申请号：US11941807
申请日：2007-11-16
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2933/0091
摘要： An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.
摘要翻译： 电致发光器件包括导电衬底，反射层，图案化透明导电层，至少一个发光二极管（LED）元件，第一接触电极和第二接触电极。 反射层设置在导电基板上，图案化的透明导电层形成在反射层上。 LED元件形成在图案化的透明导电层上，LED元件依次包括第一半导体层，发光层和第二半导体层。 第二半导体层设置在图案化的透明导电层和反射层上。 第一接触电极设置在第一半导体层的一侧，第二接触电极设置在导电基板的一侧。
-
公开(公告)号：US20090152583A1
公开(公告)日：2009-06-18
申请号：US12269407
申请日：2008-11-12
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01L33/382
摘要： A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
摘要翻译： 发光二极管器件包括外延层，电流阻挡层和电流扩散层。 电流阻挡层设置在外延层的一侧上并与外延层的一部分接触。 电流扩散层设置在外延层的一侧并与电流阻挡层的至少一部分接触。
-
公开(公告)号：US20080142826A1
公开(公告)日：2008-06-19
申请号：US11944340
申请日：2007-11-21
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/64
摘要： An electroluminescent device includes a heat-conductive substrate, a heat-conductive adhering layer, a heat-conductive insulating layer, a reflective layer, a light-emitting diode element, a first contacting electrode and a second contacting electrode. The heat-conductive adhering layer is formed on the heat-conductive substrate. The heat-conductive insulating layer is formed on the heat-conductive adhering layer. The reflective layer is formed on the heat-conductive insulating layer. The light-emitting diode element is formed on the reflective layer, and a part of the reflective layer is exposed from the light-emitting diode element. The first contacting electrode is disposed on the light-emitting diode element. The second contacting electrode is disposed on the exposed reflective layer. A manufacturing method of the electroluminescent device is also disclosed.
摘要翻译： 电致发光器件包括导热衬底，导热粘合层，导热绝缘层，反射层，发光二极管元件，第一接触电极和第二接触电极。 导热粘接层形成在导热基板上。 导热性绝缘层形成在导热性粘接层上。 反射层形成在导热绝缘层上。 发光二极管元件形成在反射层上，反射层的一部分从发光二极管元件露出。 第一接触电极设置在发光二极管元件上。 第二接触电极设置在曝光的反射层上。 还公开了电致发光器件的制造方法。
-
公开(公告)号：US08048696B2
公开(公告)日：2011-11-01
申请号：US12068554
申请日：2008-02-07
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/60 , H01L33/641
摘要： A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.
摘要翻译： 发光二极管（LED）装置包括堆叠的外延结构，导热板和种子层。 堆叠的外延结构依次包括第一半导体层（N-GaN），发光层和第二半导体层（P-GaN）。 导热板设置在第一半导体层上，种子层设置在第一半导体层和导热板之间。 另外，本发明还公开了一种制造方法，其特征在于，包括以下步骤：在LED装置上形成至少一个由可固化聚合物材料制成的临时衬底，并且至少在所述LED器件上形成导热板。
-
-
-
-
-
-
-
-
-
搜索结果
26 条记录 (耗时 0.025 秒)
