Invention Grant
- Patent Title: Method for manufacturing semiconductor light emitting device
- Patent Title (中): 半导体发光元件的制造方法
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Application No.: US14021551Application Date: 2013-09-09
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Publication No.: US08883529B2Publication Date: 2014-11-11
- Inventor: Yohei Wakai , Hiroaki Matsumura , Kenji Oka
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi, Tokushima
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-Shi, Tokushima
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2007-341111 20071228
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L33/20 ; H01L33/22 ; H01L33/00 ; H01L33/36 ; H01L33/44

Abstract:
A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.
Public/Granted literature
- US20140038328A1 Method for manufacturing semiconductor light emitting device Public/Granted day:2014-02-06
Information query
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