Invention Grant
US08884308B2 High electron mobility transistor structure with improved breakdown voltage performance
有权
具有提高击穿电压性能的高电子迁移率晶体管结构
- Patent Title: High electron mobility transistor structure with improved breakdown voltage performance
- Patent Title (中): 具有提高击穿电压性能的高电子迁移率晶体管结构
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Application No.: US13650610Application Date: 2012-10-12
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Publication No.: US08884308B2Publication Date: 2014-11-11
- Inventor: Chen-Ju Yu , Chih-Wen Hsiung , Fu-Wei Yao , Chun-Wei Hsu , King-Yuen Wong , Jiun-Lei Jerry Yu , Fu-Chih Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/778 ; H01L29/16 ; H01L21/02
Abstract:
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.
Public/Granted literature
- US20130134435A1 HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE WITH IMPROVED BREAKDOWN VOLTAGE PERFORMANCE Public/Granted day:2013-05-30
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