发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12727712申请日： 2010-03-19
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公开(公告)号： US08884355B2公开(公告)日： 2014-11-11
- 发明人: Yosuke Komori , Hideaki Aochi , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Tomoko Fujiwara , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人： Yosuke Komori , Hideaki Aochi , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Tomoko Fujiwara , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-181298 20090804
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L29/792 ; H01L27/115 ; H01L29/66
摘要：
A nonvolatile semiconductor memory device includes: a stacked structural unit including a plurality of electrode films and a plurality of inter-electrode insulating films alternately stacked in a first direction; a first selection gate electrode stacked on the stacked structural unit in the first direction; a first semiconductor pillar piercing the stacked structural unit and the first selection gate electrode in the first direction; a first memory unit provided at an intersection of each of the electrode films and the first semiconductor pillar; and a first selection gate insulating film provided between the first semiconductor pillar and the first selection gate electrode, the first selection gate electrode including a first silicide layer provided on a face of the first selection gate electrode perpendicular to the first direction.
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