Invention Grant
- Patent Title: Flexible semiconductor device and method of manufacturing the same
- Patent Title (中): 柔性半导体器件及其制造方法
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Application No.: US13919460Application Date: 2013-06-17
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Publication No.: US08889442B2Publication Date: 2014-11-18
- Inventor: Eun-hyoung Cho , Jun-hee Choi , Jin-seung Sohn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0142239 20121207
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L21/56 ; H01L29/40
Abstract:
Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.
Public/Granted literature
- US20140162406A1 FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-06-12
Information query
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