Invention Grant
- Patent Title: Double layer interleaved p-n diode modulator
- Patent Title (中): 双层交错p-n二极管调制器
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Application No.: US13529360Application Date: 2012-06-21
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Publication No.: US08889447B2Publication Date: 2014-11-18
- Inventor: William M. Green , Jessie C. Rosenberg , Yurii A. Vlasov
- Applicant: William M. Green , Jessie C. Rosenberg , Yurii A. Vlasov
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.
Public/Granted literature
- US20130344634A1 Double Layer Interleaved P-N Diode Modulator Public/Granted day:2013-12-26
Information query
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