发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US13917012申请日： 2013-06-13
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公开(公告)号： US08889496B2公开(公告)日： 2014-11-18
- 发明人: Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tsuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-205328 20090904; JP2009-206490 20090907
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/335 ; H01L29/66 ; H01L29/786 ; H01L21/02
摘要：
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
公开/授权文献
- US20130280857A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2013-10-24
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