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1.发明授权公开(公告)号：US10084186B2
公开(公告)日：2018-09-25
申请号：US14920650
申请日：2015-10-22
发明人： Takahiro Kawakami , Teruaki Ochiai , Shuhei Yoshitomi , Takuya Hirohashi , Mako Motoyoshi , Yohei Momma , Junya Goto
IPC分类号： H01M4/505 , H01M4/36 , H01M4/131 , H01M4/1391
CPC分类号： H01M4/505 , H01M4/131 , H01M4/1391 , H01M4/366 , H01M2220/30
摘要： To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.
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公开(公告)号：US09748401B2
公开(公告)日：2017-08-29
申请号：US14547285
申请日：2014-11-19
发明人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/40
CPC分类号： H01L29/7869 , H01L29/408
摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1
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公开(公告)号：US11719980B2
公开(公告)日：2023-08-08
申请号：US16780980
申请日：2020-02-04
发明人： Shuhei Yoshitomi , Daisuke Kubota , Koji Kusunoki
IPC分类号： G02F1/1343 , G06F3/044 , G02F1/1368 , G06F1/3234 , G02F1/1362
CPC分类号： G02F1/134309 , G02F1/1368 , G06F1/3265 , G06F3/044 , G06F3/0446 , G02F1/134345 , G02F1/134372 , G02F1/136286 , G02F2201/121 , G02F2201/123 , G02F2201/40 , Y02D10/00
摘要： A high-definition liquid crystal display device is provided. A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with a high contrast ratio and display quality is provided. A liquid crystal display device capable of being driven at a low voltage is provided. The display device includes, between a pair of substrates, a pixel electrode, a first common electrode, a second common electrode, and a liquid crystal layer. The pixel electrode and the first common electrode are positioned between the liquid crystal layer and one of the substrates. The second common electrode is positioned between the liquid crystal layer and the other substrate. The same potential is supplied to the first common electrode and the second common electrode. The first common electrode includes a portion overlapping with the second common electrode between the display regions of two adjacent subpixels that exhibit different colors. At least one of the pixel electrode and the first common electrode includes a portion that does not overlap with the second common electrode in the display region of the subpixel.
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公开(公告)号：US09774034B2
公开(公告)日：2017-09-26
申请号：US14553674
申请日：2014-11-25
发明人： Takahiro Kawakami , Mayumi Mikami , Shunsuke Adachi , Shuhei Yoshitomi , Teruaki Ochiai , Yumiko Yoneda , Yohei Momma , Satoshi Seo
CPC分类号： H01M4/505 , C01G45/1228 , C01G53/50 , C01P2002/80 , C01P2002/85 , C01P2002/89 , C01P2004/04 , H01M4/366 , H01M4/525 , H01M4/5825
摘要： To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.
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公开(公告)号：US09768207B2
公开(公告)日：2017-09-19
申请号：US15217177
申请日：2016-07-22
发明人： Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tsuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
IPC分类号： H01L21/84 , H01L27/12 , H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
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6.发明申请LITHIUM MANGANESE OXIDE COMPOSITE, SECONDARY BATTERY, AND MANUFACTURING METHOD THEREOF 有权锂锰氧化物复合材料，二次电池及其制造方法公开(公告)号：US20140332715A1
公开(公告)日：2014-11-13
申请号：US14272718
申请日：2014-05-08
发明人： Takahiro KAWAKAMI , Shuhei Yoshitomi , Teruaki Ochiai , Satoshi Seo , Yohei Momma , Yumiko Saito
CPC分类号： H01B1/08 , C01G45/1242 , C01G45/1257 , C01P2002/72 , C01P2002/76 , C01P2004/80 , C01P2006/40 , H01M4/131 , H01M4/364 , H01M4/366 , H01M4/505 , Y02P70/54
摘要： To increase the amount of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A composite material of crystallites of LiMn2O4 (crystallites with a spinel crystal structure) and crystallites of Li2MnO3 (crystallites with a layered rock-salt crystal structure) is used as a positive electrode active material. The lithium manganese oxide composite has high structural stability and high capacity.
摘要翻译： 为了增加可以从正极活性物质中吸收和释放的锂离子的量，以实现二次电池的高容量和高能量密度。 使用LiMn2O4（具有尖晶石晶体结构的微晶）和Li2MnO3微晶（具有层状岩盐晶体结构的微晶）的微晶复合材料作为正极活性物质。 该锰酸锂复合材料具有结构稳定性高，容量大的特点。
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公开(公告)号：US09882211B2
公开(公告)日：2018-01-30
申请号：US14704508
申请日：2015-05-05
发明人： Takahiro Kawakami , Tatsuya Ikenuma , Teruaki Ochiai , Shuhei Yoshitomi , Mako Motoyoshi , Hiroyuki Miyake , Yohei Momma , Takuya Hirohashi , Satoshi Seo
IPC分类号： H01M4/36 , H01M4/485 , H01M4/48 , H01M4/62 , H01M4/583 , G06F1/16 , H01M4/505 , G04G21/00 , H01M4/525 , H01M10/052
CPC分类号： H01M4/485 , G04C10/00 , G04G21/00 , G06F1/16 , G06F1/1626 , G06F1/163 , G06F1/1635 , G06F1/1652 , H01M4/366 , H01M4/483 , H01M4/505 , H01M4/525 , H01M4/583 , H01M4/623 , H01M4/625 , H01M10/052 , H01M2220/30
摘要： A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with improved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.
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公开(公告)号：US09530806B2
公开(公告)日：2016-12-27
申请号：US14521710
申请日：2014-10-23
发明人： Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tsuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
IPC分类号： H01L21/84 , H01L27/12 , H01L29/786 , H01L29/66 , H01L21/02
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
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9.发明授权公开(公告)号：US09293236B2
公开(公告)日：2016-03-22
申请号：US14318727
申请日：2014-06-30
发明人： Takahiro Kawakami , Shuhei Yoshitomi , Teruaki Ochiai , Yumiko Saito , Yohei Momma , Satoshi Seo , Mayumi Mikami , Shunsuke Adachi
CPC分类号： H01M4/505 , H01B1/08 , H01M4/362 , H01M4/525 , H01M10/052 , H01M10/0525 , H01M2004/028 , H01M2220/20 , H01M2220/30 , Y02E60/122
摘要： The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0≦x/(y+z) 0, z>0, 0.26≦(y+z)/w
摘要翻译： 能够在正极活性物质中吸收和释放的锂离子的量增加，二次电池的高容量和高能量密度得以实现。 提供了由LixMnyMzOw表示的锂锰复合氧化物，其中M是除Li和Mn以外的金属元素，或Si或P，y，z和w满足0＆lt; nlE; x /（y + z）<2，y > 0，z> 0,0.26和nlE;（y + z）/ w <0.5和0.2
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公开(公告)号：US08889496B2
公开(公告)日：2014-11-18
申请号：US13917012
申请日：2013-06-13
发明人： Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tsuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
IPC分类号： H01L21/00 , H01L21/84 , H01L21/335 , H01L29/66 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
摘要翻译： 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。
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