Methods of forming a pattern on a substrate

Invention Grant

US08889559B2 Methods of forming a pattern on a substrate 有权

Title translation: 在基板上形成图案的方法

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Patent Title: Methods of forming a pattern on a substrate
Patent Title (中): 在基板上形成图案的方法
Application No.: US13712830

Application Date: 2012-12-12
Publication No.: US08889559B2

Publication Date: 2014-11-18
Inventor: Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
Applicant: Micron Technology, Inc.
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Wells St. John, P.S.
Main IPC: H01L21/308
IPC: H01L21/308 ; B44C1/22

Methods of forming a pattern on a substrate

Abstract:

A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

Abstract(Chinese):

在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。在第一含材料柱的侧壁上形成侧壁间隔物。侧壁间隔物在第一含材料柱的横向向外形成间隙空间。间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。

Public/Granted literature

US20140162459A1 Methods of Forming A Pattern On A Substrate Public/Granted day:2014-06-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）