发明授权
US08890116B2 Vertical stacking of carbon nanotube arrays for current enhancement and control
有权
用于当前增强和控制的碳纳米管阵列的垂直堆叠
- 专利标题: Vertical stacking of carbon nanotube arrays for current enhancement and control
- 专利标题(中): 用于当前增强和控制的碳纳米管阵列的垂直堆叠
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申请号: US13610089申请日: 2012-09-11
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公开(公告)号: US08890116B2公开(公告)日: 2014-11-18
- 发明人: Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han
- 申请人: Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Michael J. Chang, LLC
- 代理商 Vazken Alexanian
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L51/00 ; B82Y10/00 ; H01L51/05
摘要:
Transistor devices having vertically stacked carbon nanotube channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; a bottom gate embedded in the substrate with a top surface of the bottom gate being substantially coplanar with a surface of the substrate; a stack of device layers on the substrate over the bottom gate, wherein each of the device layers in the stack includes a first dielectric, a carbon nanotube channel on the first dielectric, a second dielectric on the carbon nanotube channel and a top gate on the second dielectric; and source and drain contacts that interconnect the carbon nanotube channels in parallel. A method of fabricating a transistor device is also provided.