发明授权
- 专利标题： Polysilicon design for replacement gate technology
- 专利标题（中）： 多晶硅设计替代栅极技术
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申请号： US12554604申请日： 2009-09-04
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公开(公告)号： US08890260B2公开(公告)日： 2014-11-18
- 发明人: Harry Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人： Harry Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/06 ; H01L27/092 ; H01L29/66 ; H01L21/8238 ; H01L49/02
摘要：
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.
公开/授权文献
- US20110057267A1 POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY 公开/授权日：2011-03-10
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