公开(公告)号：US08343867B2

公开(公告)日：2013-01-01

申请号：US13234674

申请日：2011-09-16

申请人： Jin-Aun Ng ,  Yu-Ying Hsu ,  Chi-Ju Lee ,  Sin-Hua Wu ,  Bao-Ru Young ,  Harry-Hak-Lay Chuang

发明人： Jin-Aun Ng ,  Yu-Ying Hsu ,  Chi-Ju Lee ,  Sin-Hua Wu ,  Bao-Ru Young ,  Harry-Hak-Lay Chuang

IPC分类号： H01L21/4763

CPC分类号： H01L21/823425 ,  H01L21/823468 ,  H01L21/823475

摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.

摘要翻译： 在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。 工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。 氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。 集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。 接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

公开(公告)号：US20110237040A1

公开(公告)日：2011-09-29

申请号：US12730375

申请日：2010-03-24

申请人： Jin-Aun NG ,  Yu-Ying HSU ,  Chi-Ju LEE ,  Sin-Hua WU ,  Bao-Ru YOUNG ,  Harry-Hak-Lay CHUANG

发明人： Jin-Aun NG ,  Yu-Ying HSU ,  Chi-Ju LEE ,  Sin-Hua WU ,  Bao-Ru YOUNG ,  Harry-Hak-Lay CHUANG

IPC分类号： H01L21/336

CPC分类号： H01L21/823425 ,  H01L21/823468 ,  H01L21/823475

摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.

摘要翻译： 在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。 工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。 氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。 集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。 接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

公开(公告)号：US20110143276A1

公开(公告)日：2011-06-16

申请号：US12729200

申请日：2010-03-22

申请人： Kuo-Tung Huang ,  Ju-Feng Liao ,  I-Jein Cheng ,  Jui-Fa Chang ,  Yu-Chin Lin ,  Hsiang-Yun Lee ,  Yu-Ying Hsu

发明人： Kuo-Tung Huang ,  Ju-Feng Liao ,  I-Jein Cheng ,  Jui-Fa Chang ,  Yu-Chin Lin ,  Hsiang-Yun Lee ,  Yu-Ying Hsu

IPC分类号： G03G9/093

CPC分类号： G03G9/09328 ,  G03G9/09371 ,  G03G9/09392

摘要： Disclosed are a biomass chemical toner composition and a method for manufacturing the same. First, a biomass resin is mixed with a first hydrophobic resin to form organic particles. The organic particles, a second hydrophobic resin, and a pigment are mixed by emulsion aggregation to form cores. Subsequently, a third hydrophobic resin is formed on the surface of the cores, and the third hydrophobic resin is further heated and coalesced to form a continuous structure encapsulating the cores. Accordingly, the biomass chemical toner obtained from the described method has good anti-humidity, good charge stability, and low fusing temperature.

摘要翻译： 公开了一种生物质化学调色剂组合物及其制造方法。 首先，将生物质树脂与第一疏水性树脂混合，形成有机粒子。 有机颗粒，第二疏水性树脂和颜料通过乳液聚集混合形成芯。 随后，在芯的表面上形成第三疏水性树脂，并且第三疏水性树脂被进一步加热并聚结以形成包封芯的连续结构。 因此，从所述方法获得的生物质化学调色剂具有良好的抗湿度，良好的电荷稳定性和低定影温度。

公开(公告)号：US20090085016A1

公开(公告)日：2009-04-02

申请号：US12098492

申请日：2008-04-07

申请人： Chin-Cheng Weng ,  Kuo-Tung Huang ,  I-Jein Cheng ,  Ming-Tzung Wu ,  Yu-Ying Hsu ,  Chiang Yun Li

发明人： Chin-Cheng Weng ,  Kuo-Tung Huang ,  I-Jein Cheng ,  Ming-Tzung Wu ,  Yu-Ying Hsu ,  Chiang Yun Li

IPC分类号： G02B5/23

CPC分类号： G02B5/201 ,  C09B67/0002 ,  C09B67/009 ,  G02B5/223

摘要： A high optical contrast pigment and colorful photosensitive composition employing the same are disclosed. The composition comprises a solvent, an alkali-soluble resin, reactive monomer, and a modified pigment which has low crystallization. The low crystallization degree means that the grain size variation R is not more 80%, wherein the grain size variation R is represented by a formula R=G1/G0×100%, G0 is the original grain size, and G1 is the grain size after modification.

摘要翻译： 公开了一种高光学对比颜料和采用该光学成色剂的彩色光敏组合物。 该组合物包含溶剂，碱溶性树脂，反应性单体和具有低结晶度的改性颜料。 低结晶度意味着晶粒尺寸变化R不大于80％，其中晶粒尺寸变化R由公式R = G1 / G0×100％表示，G0是原始晶粒尺寸，G1是改性后的晶粒尺寸 。

公开(公告)号：US08703017B2

公开(公告)日：2014-04-22

申请号：US13337634

申请日：2011-12-27

申请人： Kuo-Tung Huang ,  Yu-Ying Hsu ,  Bee-Yu Wei

发明人： Kuo-Tung Huang ,  Yu-Ying Hsu ,  Bee-Yu Wei

IPC分类号： C09K11/02

CPC分类号： C09K11/02 ,  C08L83/02 ,  C09D7/61 ,  C09K11/7778 ,  H01J61/44 ,  Y10T428/2993

摘要： A method of modifying a phosphor and a phosphor composition and a manufacturing method of the same and a phosphor solution are provided. The phosphor composition includes a silicone resin and a modified phosphor. The modified phosphor includes a phosphor and a nano-silica particle. The nano-silica particle is adhered to the phosphor. A weight ratio of the modified phosphor to the silicone resin is substantially between 1:0.005 and 1:0.1.

摘要翻译： 提供了修饰荧光体和荧光体组合物的方法及其制造方法和荧光体溶液。 荧光体组合物包括硅树脂和改性荧光体。 改性荧光体包括磷光体和纳米二氧化硅粒子。 纳米二氧化硅颗粒粘附到荧光体上。 改性荧光体与有机硅树脂的重量比基本上在1:0.05至1:0.1之间。

公开(公告)号：US08039388B1

公开(公告)日：2011-10-18

申请号：US12730375

申请日：2010-03-24

申请人： Jin-Aun Ng ,  Yu-Ying Hsu ,  Chi-Ju Lee ,  Sin-Hua Wu ,  Bao-Ru Young ,  Harry-Hak-Lay Chuang

发明人： Jin-Aun Ng ,  Yu-Ying Hsu ,  Chi-Ju Lee ,  Sin-Hua Wu ,  Bao-Ru Young ,  Harry-Hak-Lay Chuang

IPC分类号： H01L21/4763

CPC分类号： H01L21/823425 ,  H01L21/823468 ,  H01L21/823475

摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.

摘要翻译： 在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。 工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。 氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。 集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。 接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

公开(公告)号：US20110057267A1

公开(公告)日：2011-03-10

申请号：US12554604

申请日：2009-09-04

申请人： Harry Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

发明人： Harry Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

IPC分类号： H01L27/06 ,  H01L29/86 ,  H01L21/02 ,  H01L21/82

CPC分类号： H01L29/66545 ,  H01L21/823842 ,  H01L27/0629 ,  H01L27/0802 ,  H01L27/0922 ,  H01L28/20 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/6672

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

摘要翻译： 本发明提供集成电路。 集成电路包括半导体衬底; 以及设置在半导体衬底上的无源多晶硅器件。 无源多晶硅器件还包括多晶硅特征; 以及嵌入在多晶硅特征中的多个电极。

公开(公告)号：US20130009204A1

公开(公告)日：2013-01-10

申请号：US13176780

申请日：2011-07-06

申请人： Ming-Hsiang SONG ,  Jam-Wem LEE ,  Tzu-Heng CHANG ,  Yu-Ying HSU

发明人： Ming-Hsiang SONG ,  Jam-Wem LEE ,  Tzu-Heng CHANG ,  Yu-Ying HSU

IPC分类号： H01L27/06

CPC分类号： H01L27/0262

摘要： An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal. The first SCR circuit is coupled between the pad and the positive power supply terminal. The first SCR circuit has a first trigger input coupled to the RC power clamp circuit. The second SCR circuit is coupled between the pad and the ground terminal. The second SCR circuit has a second trigger input coupled to the RC power clamp circuit. At least one of the SCR circuits includes a gated diode configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

摘要翻译： ESD保护电路包括IC的焊盘，耦合到用于缓冲数据的焊盘的电路，IC上的RC功率钳，以及第一和第二可硅可控整流器（SCR）电路。 RC电源钳位在正电源端子和接地端子之间。 第一SCR电路耦合在焊盘和正电源端子之间。 第一SCR电路具有耦合到RC功率钳位电路的第一触发输入。 第二SCR电路耦合在焊盘和接地端子之间。 第二SCR电路具有耦合到RC功率钳位电路的第二触发输入。 SCR电路中的至少一个包括栅极二极管，其被配置为选择性地在焊盘与正电源端子和接地端子之一之间提供短路或相对导电的电路径。

公开(公告)号：US08283099B2

公开(公告)日：2012-10-09

申请号：US12729200

申请日：2010-03-22

申请人： Kuo-Tung Huang ,  Ju-Feng Liao ,  I-Jein Cheng ,  Jui-Fa Chang ,  Yu-Chin Lin ,  Hsiang-Yun Lee ,  Yu-Ying Hsu

发明人： Kuo-Tung Huang ,  Ju-Feng Liao ,  I-Jein Cheng ,  Jui-Fa Chang ,  Yu-Chin Lin ,  Hsiang-Yun Lee ,  Yu-Ying Hsu

IPC分类号： G03G9/08

CPC分类号： G03G9/09328 ,  G03G9/09371 ,  G03G9/09392

摘要： Disclosed are a biomass chemical toner composition and a method for manufacturing the same. First, a biomass resin is mixed with a first hydrophobic resin to form organic particles. The organic particles, a second hydrophobic resin, and a pigment are mixed by emulsion aggregation to form cores. Subsequently, a third hydrophobic resin is formed on the surface of the cores, and the third hydrophobic resin is further heated and coalesced to form a continuous structure encapsulating the cores. Accordingly, the biomass chemical toner obtained from the described method has good anti-humidity, good charge stability, and low fusing temperature.

摘要翻译： 公开了一种生物质化学调色剂组合物及其制造方法。 首先，将生物质树脂与第一疏水性树脂混合，形成有机粒子。 有机颗粒，第二疏水性树脂和颜料通过乳液聚集混合形成芯。 随后，在芯的表面上形成第三疏水性树脂，并且第三疏水性树脂被进一步加热并聚结以形成包封芯的连续结构。 因此，从所述方法获得的生物质化学调色剂具有良好的抗湿度，良好的电荷稳定性和低定影温度。

公开(公告)号：US08759871B2

公开(公告)日：2014-06-24

申请号：US13176780

申请日：2011-07-06

申请人： Ming-Hsiang Song ,  Jam-Wem Lee ,  Tzu-Heng Chang ,  Yu-Ying Hsu

发明人： Ming-Hsiang Song ,  Jam-Wem Lee ,  Tzu-Heng Chang ,  Yu-Ying Hsu

IPC分类号： H01L29/66

CPC分类号： H01L27/0262

摘要： An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal. The first SCR circuit is coupled between the pad and the positive power supply terminal. The first SCR circuit has a first trigger input coupled to the RC power clamp circuit. The second SCR circuit is coupled between the pad and the ground terminal. The second SCR circuit has a second trigger input coupled to the RC power clamp circuit. At least one of the SCR circuits includes a gated diode configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

摘要翻译： ESD保护电路包括IC的焊盘，耦合到用于缓冲数据的焊盘的电路，IC上的RC功率钳，以及第一和第二可硅可控整流器（SCR）电路。 RC电源钳位在正电源端子和接地端子之间。 第一SCR电路耦合在焊盘和正电源端子之间。 第一SCR电路具有耦合到RC功率钳位电路的第一触发输入。 第二SCR电路耦合在焊盘和接地端子之间。 第二SCR电路具有耦合到RC功率钳位电路的第二触发输入。 SCR电路中的至少一个包括栅极二极管，其被配置为选择性地在焊盘与正电源端子和接地端子之一之间提供短路或相对导电的电路径。