发明授权
- 专利标题: Lithographic focus and dose measurement using a 2-D target
- 专利标题(中): 使用2-D目标的平版照相重点和剂量测量
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申请号: US13062861申请日: 2009-10-02
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公开(公告)号: US08891061B2公开(公告)日: 2014-11-18
- 发明人: Christian Marinus Leewis , Hugo Augustinus Joseph Cramer , Marcus Adrianus Van De Kerkhof , Johannes Anna Quaedackers , Christine Corinne Mattheus
- 申请人: Christian Marinus Leewis , Hugo Augustinus Joseph Cramer , Marcus Adrianus Van De Kerkhof , Johannes Anna Quaedackers , Christine Corinne Mattheus
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C
- 国际申请: PCT/EP2009/062840 WO 20091002
- 国际公布: WO2010/040696 WO 20100415
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.
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