Invention Grant
US08891322B2 Memory system with a layer comprising a dedicated redundancy area
有权
具有包括专用冗余区域的层的存储器系统
- Patent Title: Memory system with a layer comprising a dedicated redundancy area
- Patent Title (中): 具有包括专用冗余区域的层的存储器系统
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Application No.: US13621486Application Date: 2012-09-17
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Publication No.: US08891322B2Publication Date: 2014-11-18
- Inventor: Hong Beom Pyeon
- Applicant: Hong Beom Pyeon
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agent Dennis R. Haszko
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/44 ; G11C29/12

Abstract:
Systems and methods are disclosed that may include a first layer comprising a first redundant memory element, an input/output interface, a first layer fuse box, and a fuse blowing control. These systems and methods also may include a second layer coupled to the first layer through a first connection comprising a second layer memory element and a second layer fuse box coupled to the first redundant memory element. In addition, these systems and methods may further include a redundancy register coupled to the first layer, wherein upon the failure of part of the second layer memory element, the redundancy register provides information to the fuse blowing control that allocates part of the first redundant memory element to provide redundancy for the failed part of the second layer memory element by blowing elements in the first layer fuse box and the second layer fuse box.
Public/Granted literature
- US20130070547A1 MEMORY SYSTEM WITH A LAYER COMPRISING A DEDICATED REDUNDANCY AREA Public/Granted day:2013-03-21
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