Invention Grant
- Patent Title: Fabrication method of semiconductor package
- Patent Title (中): 半导体封装的制造方法
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Application No.: US14190635Application Date: 2014-02-26
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Publication No.: US08895366B2Publication Date: 2014-11-25
- Inventor: Wen-Home Huang , Wen-Tsung Tseng , Chang-Fu Lin , Ho-Yi Tsai , Cheng-Hsu Hsiao
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/56 ; H01L29/06 ; H01L23/31

Abstract:
A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.
Public/Granted literature
- US20140179067A1 FABRICATION METHOD OF SEMICONDUCTOR PACKAGE Public/Granted day:2014-06-26
Information query
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