Invention Grant
- Patent Title: Fabrication method of semiconductor package
- Patent Title (中): 半导体封装的制造方法
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Application No.: US13964465Application Date: 2013-08-12
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Publication No.: US08895367B2Publication Date: 2014-11-25
- Inventor: Jung-Pang Huang , Hui-Min Huang , Kuan-Wei Chuang , Chun-Tang Lin , Yih-Jenn Jiang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW99145148A 20101222
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/00 ; H01L23/36 ; H01L23/538 ; H01L23/31

Abstract:
A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.
Public/Granted literature
- US20130330883A1 FABRICATION METHOD OF SEMICONDUCTOR PACKAGE Public/Granted day:2013-12-12
Information query
IPC分类: