发明授权
US08895403B2 Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor
有权
晶体管，晶体管的制造方法以及包括该晶体管的半导体器件
- 专利标题： Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor
- 专利标题（中）： 晶体管，晶体管的制造方法以及包括该晶体管的半导体器件
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申请号： US13698276申请日： 2011-11-30
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公开(公告)号： US08895403B2公开(公告)日： 2014-11-25
- 发明人: Qingqing Liang , Huicai Zhong , Huilong Zhu
- 申请人： Qingqing Liang , Huicai Zhong , Huilong Zhu
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Martine Penilla Group, LLP
- 优先权： CN201110336801 20111031
- 国际申请： PCT/CN2011/001998 WO 20111130
- 国际公布： WO2013/063728 WO 20130510
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L27/088 ; H01L21/8238 ; H01L21/84 ; H01L27/12
摘要：
A transistor, a method for fabricating a transistor, and a semiconductor device comprising the transistor are disclosed in the present invention. The method for fabricating a transistor may comprise: providing a substrate and forming a first insulating layer on the substrate; defining a first device area on the first insulating layer; forming a spacer surrounding the first device area on the first insulating layer; defining a second device area on the first insulating layer, wherein the second device area is isolated from the first device area by the spacer; and forming transistor structures in the first and second device area, respectively. The method for fabricating a transistor of the present invention greatly reduces the space required for isolation, significantly decreases the process complexity, and greatly reduces fabricating cost.
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