发明授权
- 专利标题： Polysilicon layer and method of forming the same
- 专利标题（中）： 多晶硅层及其形成方法
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申请号： US13018009申请日： 2011-01-31
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公开(公告)号： US08895435B2公开(公告)日： 2014-11-25
- 发明人: Chien-Liang Lin , Yun-Ren Wang , Ying-Wei Yen , Wen-Yi Teng , Chan-Lon Yang
- 申请人： Chien-Liang Lin , Yun-Ren Wang , Ying-Wei Yen , Wen-Yi Teng , Chan-Lon Yang
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/20 ; H01L21/36 ; H01L21/44 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/28 ; H01L29/49 ; H01L21/265
摘要：
The method of forming a polysilicon layer is provided. A first polysilicon layer with a first grain size is formed on a substrate. A second polysilicon layer with a second grain size is formed on the first polysilicon layer. The first grain size is smaller than the second grain size. The first polysilicon layer with a smaller grain size can serve as a base for the following deposition, so that the second polysilicon layer formed thereon has a flatter topography, and thus, the surface roughness is reduced and the Rs uniformity within a wafer is improved.
公开/授权文献
- US20120193796A1 POLYSILICON LAYER AND METHOD OF FORMING THE SAME 公开/授权日：2012-08-02
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