发明授权
US08895842B2 High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
有权
高效率薄膜硅太阳能电池的高品质TCO硅接口接触结构
- 专利标题： High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
- 专利标题（中）： 高效率薄膜硅太阳能电池的高品质TCO硅接口接触结构
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申请号： US12481175申请日： 2009-06-09
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公开(公告)号： US08895842B2公开(公告)日： 2014-11-25
- 发明人: Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- 申请人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/00 ; H01L31/20 ; H01L31/076 ; H01L31/0224 ; C23C16/24 ; H01L31/18
摘要：
A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
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