Invention Grant
US08895842B2 High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
有权
高效率薄膜硅太阳能电池的高品质TCO硅接口接触结构
- Patent Title: High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
- Patent Title (中): 高效率薄膜硅太阳能电池的高品质TCO硅接口接触结构
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Application No.: US12481175Application Date: 2009-06-09
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Publication No.: US08895842B2Publication Date: 2014-11-25
- Inventor: Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- Applicant: Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/20 ; H01L31/076 ; H01L31/0224 ; C23C16/24 ; H01L31/18
Abstract:
A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
Public/Granted literature
- US20100051098A1 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS Public/Granted day:2010-03-04
Information query
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