Invention Grant
- Patent Title: Method of fabricating high efficiency CIGS solar cells
- Patent Title (中): 制造高效CIGS太阳能电池的方法
-
Application No.: US13727845Application Date: 2012-12-27
-
Publication No.: US08900664B2Publication Date: 2014-12-02
- Inventor: Haifan Liang , Jessica Eid , Jeroen Van Duren
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L31/18 ; H01L31/032 ; H01L31/0392 ; H01L31/065 ; H01L31/0749 ; H01L21/02

Abstract:
A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.
Public/Granted literature
- US20140080250A1 Method of Fabricating High Efficiency CIGS Solar Cells Public/Granted day:2014-03-20
Information query
IPC分类: