发明授权
US08900675B2 Deposition method and method for manufacturing deposition substrate
有权
用于制造沉积基板的沉积方法和方法
- 专利标题： Deposition method and method for manufacturing deposition substrate
- 专利标题（中）： 用于制造沉积基板的沉积方法和方法
-
申请号： US13635227申请日： 2011-02-28
-
公开(公告)号： US08900675B2公开(公告)日： 2014-12-02
- 发明人: Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
- 申请人： Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
- 申请人地址： JP JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2010-062709 20100318
- 国际申请： PCT/JP2011/054530 WO 20110228
- 国际公布： WO2011/114872 WO 20110922
- 主分类号： B05D3/06
- IPC分类号： B05D3/06 ; H01L51/56 ; C23C14/12 ; C23C14/28 ; H05B33/10 ; H01L51/00 ; C23C14/56 ; H01L51/50
摘要：
One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
公开/授权文献
信息查询
