- 专利标题： Transistor with enhanced channel charge inducing material layer and threshold voltage control
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申请号： US14165602申请日： 2014-01-28
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公开(公告)号： US08900939B2公开(公告)日： 2014-12-02
- 发明人: Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
- 申请人： Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Rebecca L. Forman
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L29/66 ; H01L29/778 ; H01L29/08 ; H01L29/205 ; H01L29/423 ; H01L29/20 ; H01L29/40
摘要：
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
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