发明授权
- 专利标题: Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same
- 专利标题(中): 晶体制造装置,使用其制造的半导体装置以及使用其制造半导体装置的方法
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申请号: US13061221申请日: 2009-08-28
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公开(公告)号: US08900953B2公开(公告)日: 2014-12-02
- 发明人: Seiichiro Higashi , Naohiro Koba
- 申请人: Seiichiro Higashi , Naohiro Koba
- 申请人地址: JP Hiroshima
- 专利权人: Hiroshima University
- 当前专利权人: Hiroshima University
- 当前专利权人地址: JP Hiroshima
- 代理机构: Lowe Hauptman & Ham, LLP
- 优先权: JP2008-223419 20080901; JP2009-049616 20090303
- 国际申请: PCT/JP2009/004209 WO 20090828
- 国际公布: WO2010/023937 WO 20100304
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/67 ; H01L31/18 ; H01L29/786 ; C30B35/00 ; H01L27/12 ; C30B28/06 ; C30B29/06 ; C01B33/02 ; H01L21/02
摘要:
A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end coupled to a piston. A coil is wound around the magnetic body and electrically connected between a power supply circuit and a ground node (GND). The piston has a linear member inserted in a cylinder. The cylinder has a hollow columnar shape and a small hole at a bottom surface. The cylinder holds a silicon melt. A substrate is supported by an XY stage to be opposed to the small hole of the cylinder. The power supply circuit passes pulse shaped current through the coil to move the piston in an up-down direction (DR1). As a result, a droplet is discharged toward the substrate from the small hole at an initial speed of 1.02 m/s.
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