发明授权
US08900955B2 Thin film transistor device with accurately aligned electrode patterns
有权
薄膜晶体管器件具有精确对准的电极图案
- 专利标题: Thin film transistor device with accurately aligned electrode patterns
- 专利标题(中): 薄膜晶体管器件具有精确对准的电极图案
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申请号: US13621095申请日: 2012-09-15
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公开(公告)号: US08900955B2公开(公告)日: 2014-12-02
- 发明人: Paul A. Cain , Yong-Young Noh , Henning Sirringhaus
- 申请人: Paul A. Cain , Yong-Young Noh , Henning Sirringhaus
- 申请人地址: GB GB
- 专利权人: Cambridge Enterprise Limited,Plastic Logic Limited
- 当前专利权人: Cambridge Enterprise Limited,Plastic Logic Limited
- 当前专利权人地址: GB GB
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 优先权: GB06062574 20060329; GB06062582 20060329; GB06067730 20060405; GB06243828 20061206; GB06243836 20061206
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L51/00 ; H01L51/10 ; H01L29/786 ; H01L51/05
摘要:
An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.
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