发明授权
- 专利标题： Nonvolatile memory device manufacturing method
- 专利标题（中）： 非易失性存储器件制造方法
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申请号： US13884630申请日： 2012-03-21
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公开(公告)号： US08900965B2公开(公告)日： 2014-12-02
- 发明人: Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
- 申请人： Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, LLP
- 优先权： JP2011-063417 20110322; JP2011-083179 20110404
- 国际申请： PCT/JP2012/001947 WO 20120321
- 国际公布： WO2012/127861 WO 20120927
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24 ; H01L27/10
摘要：
A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.
公开/授权文献
- US20130224931A1 NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD 公开/授权日：2013-08-29
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