发明授权
US08900990B2 System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections
有权
组合大马士革的系统和方法，并减去金属蚀刻用于线路互连的后端
- 专利标题： System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections
- 专利标题（中）： 组合大马士革的系统和方法，并减去金属蚀刻用于线路互连的后端
-
申请号： US13731878申请日： 2012-12-31
-
公开(公告)号： US08900990B2公开(公告)日： 2014-12-02
- 发明人: John H. Zhang , Lawrence A. Clevenger , Carl Radens , Yiheng Xu , Walter Kleemeier , Cindy Goldberg
- 申请人： STMicroelectronics, Inc. , International Business Machines Corporation
- 申请人地址： US TX Coppell US NY Armonk
- 专利权人： STMicroelectronics, Inc.,International Business Machines Corporation
- 当前专利权人： STMicroelectronics, Inc.,International Business Machines Corporation
- 当前专利权人地址： US TX Coppell US NY Armonk
- 代理机构： Seed IP Law Group PLLC
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44 ; H01L21/768 ; H01L23/538
摘要：
Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.
公开/授权文献
信息查询
IPC分类:
