Invention Grant
US08900990B2 System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections
有权
组合大马士革的系统和方法，并减去金属蚀刻用于线路互连的后端
- Patent Title: System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections
- Patent Title (中): 组合大马士革的系统和方法，并减去金属蚀刻用于线路互连的后端
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Application No.: US13731878Application Date: 2012-12-31
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Publication No.: US08900990B2Publication Date: 2014-12-02
- Inventor: John H. Zhang , Lawrence A. Clevenger , Carl Radens , Yiheng Xu , Walter Kleemeier , Cindy Goldberg
- Applicant: STMicroelectronics, Inc. , International Business Machines Corporation
- Applicant Address: US TX Coppell US NY Armonk
- Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
- Current Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
- Current Assignee Address: US TX Coppell US NY Armonk
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/768 ; H01L23/538
Abstract:
Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.
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