公开(公告)号：US20140183735A1

公开(公告)日：2014-07-03

申请号：US13731878

申请日：2012-12-31

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMICROELECTRONICS, INC.

发明人： John H. ZHANG ,  Lawrence A. Clevenger ,  Carl Radens ,  Yiheng XU ,  Walter Kleemeier ,  Cindy Goldberg

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L23/5384 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.

摘要翻译： 金属互连通过组合镶嵌工艺和减去金属蚀刻形成在一体中。 在电介质层中形成宽沟槽。 导电材料沉积在宽沟槽中。 在导电材料中蚀刻沟槽以描绘多个金属插塞，每个金属插头接触由宽沟槽暴露的相应金属轨道。

公开(公告)号：US08900990B2

公开(公告)日：2014-12-02

申请号：US13731878

申请日：2012-12-31

申请人： STMicroelectronics, Inc. ,  International Business Machines Corporation

发明人： John H. Zhang ,  Lawrence A. Clevenger ,  Carl Radens ,  Yiheng Xu ,  Walter Kleemeier ,  Cindy Goldberg

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L23/538

CPC分类号： H01L23/5384 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.

摘要翻译： 金属互连通过组合镶嵌工艺和减去金属蚀刻形成在一体中。 在电介质层中形成宽沟槽。 导电材料沉积在宽沟槽中。 在导电材料中蚀刻沟槽以描绘多个金属插塞，每个金属插头接触由宽沟槽暴露的相应金属轨道。

公开(公告)号：US20140353722A1

公开(公告)日：2014-12-04

申请号：US13907752

申请日：2013-05-31

申请人： STMicroelectronics, Inc.

发明人： John H. Zhang ,  Cindy Goldberg ,  Walter Kleemeier

IPC分类号： H01L29/66 ,  H01L29/778

CPC分类号： H01L29/66431 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787

摘要： A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability of an exemplary AlGaN/GaN heterostructure transistor used in high-frequency, high-energy applications, e.g., wireless telecommunications. The HEMT device disclosed makes use of the extraordinary material properties of graphene. One of the graphene caps acts as a heat sink underneath the transistor, while the other graphene cap stabilizes the source, drain, and gate regions of the transistor to prevent cracking during high-power operation. A process flow is disclosed for replacing a three-layer film stack, previously used to prevent cracking, with a one-atom thick layer of graphene, without otherwise degrading device performance. In addition, the HEMT device disclosed includes a hexagonal boron nitride adhesion layer to facilitate deposition of the compound nitride semiconductors onto the graphene.

摘要翻译： 公开了石墨烯封盖HEMT器件及其制造方法。 石墨烯封盖的HEMT器件包括一个或多个石墨烯帽，其增强用于高频，高能量应用（例如无线电信）中的示例性AlGaN / GaN异质结构晶体管的器件性能和/或可靠性。 所公开的HEMT装置利用石墨烯的非凡材料特性。 其中一个石墨烯帽作为晶体管下面的散热器，而另一个石墨烯帽稳定晶体管的源极，漏极和栅极区域，以防止在大功率操作期间的开裂。 公开了一种工艺流程，用于用原子厚的石墨烯层替代先前用于防止裂纹的三层膜堆，而不会使装置性能降低。 此外，所公开的HEMT器件包括六边形氮化硼粘附层，以便于将复合氮化物半导体沉积到石墨烯上。