Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems

Invention Grant

US08900992B2 Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems 有权

Title translation: 形成钌材料的方法，形成电容器的方法以及相关的电子系统

Patent Title: Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems
Patent Title (中): 形成钌材料的方法，形成电容器的方法以及相关的电子系统
Application No.: US13950583

Application Date: 2013-07-25
Publication No.: US08900992B2

Publication Date: 2014-12-02
Inventor: Vishwanath Bhat , Dan Gealy , Vassil Antonov
Applicant: Micron Technology, Inc.
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.

Abstract(Chinese):

提供了形成钌膜的方法和包括膜的诸如电容器的半导体器件。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的