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Patent Agency Ranking
1.发明授权Semiconductor structures including liners comprising alucone and related methods 有权半导体结构，包括含有alucone的衬垫和相关方法公开(公告)号：US09484196B2
公开(公告)日：2016-11-01
申请号：US14189323
申请日：2014-02-25
Applicant: Micron Technology, Inc.
Inventor： Zhe Song , Tuman E. Allen , Cole S. Franklin , Dan Gealy
IPC: H01L21/02 , H01L45/00 , H01L27/115 , H01L21/033 , H01L27/24
CPC classification number: H01L45/1691 , H01L21/02118 , H01L21/02178 , H01L21/0228 , H01L21/02362 , H01L21/0337 , H01L27/1157 , H01L27/11582 , H01L27/2409 , H01L27/2427 , H01L27/249 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/1608 , H01L45/1675
Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.
Abstract translation: 一种包括堆叠结构的半导体器件。 堆叠结构包括至少两种硫族化物材料或交替介电材料和导电材料。 在层叠结构的侧壁上形成有包含alucone的衬垫。 还公开了形成半导体器件的方法。
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2.发明申请METHODS OF FORMING A RUTHENIUM MATERIAL, METHODS OF FORMING A CAPACITOR, AND RELATED ELECTRONIC SYSTEMS 有权形成金属材料的方法，形成电容器的方法和相关的电子系统公开(公告)号：US20130307120A1
公开(公告)日：2013-11-21
申请号：US13950583
申请日：2013-07-25
Applicant: Micron Technology, Inc.
Inventor： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC: H01L49/02
CPC classification number: H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
Abstract translation: 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。
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公开(公告)号：US11223014B2
公开(公告)日：2022-01-11
申请号：US16446746
申请日：2019-06-20
Applicant: Micron Technology, Inc.
Inventor： Zhe Song , Tuman E. Allen , Cole S. Franklin , Dan Gealy
IPC: H01L45/00 , H01L27/11582 , H01L21/02 , H01L27/24 , H01L21/033 , H01L27/1157
Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.
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4.发明申请SEMICONDUCTOR STRUCTURES INCLUDING LINERS COMPRISING ALUCONE AND RELATED METHODS 有权半导体结构包括包含铝的衬里和相关方法公开(公告)号：US20150243709A1
公开(公告)日：2015-08-27
申请号：US14189323
申请日：2014-02-25
Applicant: Micron Technology, Inc.
Inventor： Zhe Song , Tuman E. Allen , Cole S. Franklin , Dan Gealy
IPC: H01L27/24 , H01L21/02 , H01L21/28 , H01L45/00 , H01L27/115
CPC classification number: H01L45/1691 , H01L21/02118 , H01L21/02178 , H01L21/0228 , H01L21/02362 , H01L21/0337 , H01L27/1157 , H01L27/11582 , H01L27/2409 , H01L27/2427 , H01L27/249 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/1608 , H01L45/1675
Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.
Abstract translation: 一种包括堆叠结构的半导体器件。 堆叠结构包括至少两种硫族化物材料或交替介电材料和导电材料。 在层叠结构的侧壁上形成有包含alucone的衬垫。 还公开了形成半导体器件的方法。
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5.发明授权Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems 有权形成钌材料的方法，形成电容器的方法以及相关的电子系统公开(公告)号：US08900992B2
公开(公告)日：2014-12-02
申请号：US13950583
申请日：2013-07-25
Applicant: Micron Technology, Inc.
Inventor： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC: H01L21/44
CPC classification number: H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
Abstract: Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.
Abstract translation: 提供了形成钌膜的方法和包括膜的诸如电容器的半导体器件。
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