发明授权
US08901014B2 Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium
有权
半导体装置的制造方法，基板处理方法，基板处理装置以及非暂时性的计算机可读记录介质
- 专利标题： Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium
- 专利标题（中）： 半导体装置的制造方法，基板处理方法，基板处理装置以及非暂时性的计算机可读记录介质
-
申请号： US13618112申请日： 2012-09-14
-
公开(公告)号： US08901014B2公开(公告)日： 2014-12-02
- 发明人: Yosuke Ota , Naonori Akae , Yoshiro Hirose , Ryota Sasajima
- 申请人： Yosuke Ota , Naonori Akae , Yoshiro Hirose , Ryota Sasajima
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2011-203799 20110916; JP2012-166405 20120726
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/455 ; H01L21/02
摘要：
Provided is a method of manufacturing a semiconductor device having a structure in which an oxide film and a nitride film are stacked. The method includes forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing a first cycle and a second cycle a predetermined number of times, the first cycle comprising forming the oxide film by supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container a predetermined number of times, and the second cycle comprising forming the nitride film by supplying the source gas and the nitriding gas to the substrate in the processing container a predetermined number of times, wherein the forming of the oxide film and the forming of the nitride film are consecutively performed while retaining a temperature of the substrate constant.
公开/授权文献
信息查询
IPC分类:
