发明授权
- 专利标题： Non-volatile programmable device including phase change layer and fabricating method thereof
- 专利标题（中）： 包括相变层的非易失性可编程装置及其制造方法
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申请号： US13466411申请日： 2012-05-08
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公开(公告)号： US08901532B2公开(公告)日： 2014-12-02
- 发明人: Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
- 申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2008-0128176 20081216
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L45/00 ; H01L27/24 ; G11C13/00
摘要：
Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.