Invention Grant
- Patent Title: Non-volatile programmable device including phase change layer and fabricating method thereof
- Patent Title (中): 包括相变层的非易失性可编程装置及其制造方法
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Application No.: US13466411Application Date: 2012-05-08
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Publication No.: US08901532B2Publication Date: 2014-12-02
- Inventor: Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
- Applicant: Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2008-0128176 20081216
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L27/24 ; G11C13/00
Abstract:
Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
Public/Granted literature
- US20120217465A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF Public/Granted day:2012-08-30
Information query
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