发明授权
- 专利标题： Transistor having doped substrate and method of making the same
- 专利标题（中）： 具有掺杂衬底的晶体管及其制造方法
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申请号： US13944494申请日： 2013-07-17
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公开(公告)号： US08901609B1公开(公告)日： 2014-12-02
- 发明人: Chi-Ming Chen , Chih-Wen Hsiung , Ming-Chang Ching , Chen-Hao Chiang , Po-Chun Liu , Chung-Yi Yu , Chia-Shiung Tsai , Xiaomeng Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/66
摘要：
A transistor includes a substrate, wherein a top portion of the substrate is doped with p-type dopants to a dopant concentration ranging from about 1×1018 ions/cm3 to about 1×1023 ions/cm3. The transistor further includes a graded layer on the substrate and a channel layer on the graded layer. The transistor further includes an active layer on the channel layer, wherein the active layer has a band gap discontinuity with the channel layer.
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