发明授权
US08901706B2 Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
有权
高稳定性高K四方HFO2层在高深宽比深沟内
- 专利标题： Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
- 专利标题（中）： 高稳定性高K四方HFO2层在高深宽比深沟内
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申请号： US13345290申请日： 2012-01-06
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公开(公告)号： US08901706B2公开(公告)日： 2014-12-02
- 发明人: Michael P. Chudzik , Bachir Dirahoui , Rishikesh Krishnan , Siddarth A. Krishnan , Oh-jung Kwon , Paul C. Parries , Hongwen Yan
- 申请人： Michael P. Chudzik , Bachir Dirahoui , Rishikesh Krishnan , Siddarth A. Krishnan , Oh-jung Kwon , Paul C. Parries , Hongwen Yan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.
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