Invention Grant
US08901716B2 Dielectric film with low coefficient of thermal expansion (CTE) using liquid crystalline resin
有权
使用液晶树脂的低热膨胀系数（CTE）的介电薄膜
- Patent Title: Dielectric film with low coefficient of thermal expansion (CTE) using liquid crystalline resin
- Patent Title (中): 使用液晶树脂的低热膨胀系数（CTE）的介电薄膜
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Application No.: US12774681Application Date: 2010-05-05
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Publication No.: US08901716B2Publication Date: 2014-12-02
- Inventor: James C. Matayabas, Jr.
- Applicant: James C. Matayabas, Jr.
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H05B6/00 ; H01L23/532 ; H01L21/768 ; H05K3/46 ; B29C47/00 ; B29C45/14 ; B29D7/00 ; H01L21/56
Abstract:
An embodiment of the present invention is a technique to provide a dielectric film material with controllable coefficient of thermal expansion (CTE). A first compound containing a first liquid crystalline component is formed. The first compound is cast into a first film. The first film is oriented in an magnetic or electromagnetic field in a first direction. The first film is cured at a first temperature.
Public/Granted literature
- US20100213581A1 DIELECTRIC FILM WITH LOW COEFFICIENT OF THERMAL EXPANSION (CTE) USING LIQUID CRYSTALLINE RESIN Public/Granted day:2010-08-26
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