发明授权
- 专利标题: Write scheme for charge trapping memory
- 专利标题(中): 电荷捕获存储器的写入方案
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申请号: US14289230申请日: 2014-05-28
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公开(公告)号: US08902647B1公开(公告)日: 2014-12-02
- 发明人: Deepak Raghu , Chris Avila , Gautam A. Dusija , Yingda Dong
- 申请人: SanDisk Technologies Inc.
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/34
摘要:
In a charge trapping memory, data that would otherwise be likely to remain adjacent to unwritten word lines is written three times, along three immediately adjacent word lines. The middle copy is protected from charge migration on either side and is considered a safe copy for later reading. Dummy data may be programmed along a number of word lines to format a block for good data retention.
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