发明授权
US08902647B1 Write scheme for charge trapping memory 有权
电荷捕获存储器的写入方案

Write scheme for charge trapping memory
摘要:
In a charge trapping memory, data that would otherwise be likely to remain adjacent to unwritten word lines is written three times, along three immediately adjacent word lines. The middle copy is protected from charge migration on either side and is considered a safe copy for later reading. Dummy data may be programmed along a number of word lines to format a block for good data retention.
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