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公开(公告)号：US09218886B2
公开(公告)日：2015-12-22
申请号：US14101992
申请日：2013-12-10
Applicant: SanDisk Technologies Inc.
Inventor： Gautam A. Dusija , Yingda Dong , Chris Avila , Deepak Raghu , Pao-Ling Koh
CPC classification number: G11C16/107 , G06F11/1068 , G06F12/0246 , G06F2212/7207 , G06F2212/7211 , G11C16/0408 , G11C16/0466 , G11C16/0483 , G11C16/3418 , G11C16/3422
Abstract: In a three-dimensional NAND memory in which a block contains multiple separately-selectable sets of strings connected to the same set of bit lines, sets of strings are zoned, and different operating parameters applied to different zones. Operating parameters for a zone are obtained from characterizing a reference set of strings in the zone.
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公开(公告)号：US08972675B2
公开(公告)日：2015-03-03
申请号：US14280282
申请日：2014-05-16
Applicant: SanDisk Technologies Inc.
Inventor： Chris Avila , Gautam A. Dusija , Jian Chen
CPC classification number: G06F12/0246 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C29/00 , G11C2211/5621 , G11C2211/5641
Abstract: Data that is stored in a higher error rate format in a 3-D nonvolatile memory is backed up in a lower error rate format. Later, the higher error rate copy is sampled to determine if it is acceptable. A sampling pattern samples all word lines of a string and at least one word line of each string of the block.
Abstract translation: 在3-D非易失性存储器中以较高错误率格式存储的数据以较低的错误率格式进行备份。 之后，对较高的错误率副本进行采样，以确定是否可以接受。 采样模式对字符串的所有字线和块的每个字符串的至少一个字线进行采样。
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公开(公告)号：US08964467B1
公开(公告)日：2015-02-24
申请号：US14284708
申请日：2014-05-22
Applicant: SanDisk Technologies, Inc.
Inventor： Gautam A. Dusija , Chris Avila , Deepak Raghu , Yingda Dong , Man Mui , Alexander Kwok-Tung Mak , Pao-Ling Koh
CPC classification number: G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3427 , G11C2211/5646 , G11C2211/5648
Abstract: Multiple bits of data are programmed together to each cell of a segment of a word line while other segments of the same word line are unprogrammed. Subsequently, additional segments are similarly programmed. Data is read from a partially programmed word line (with a mix of programmed and unprogrammed segments) using a single reading scheme.
Abstract translation: 多个数据位被一起编程到一个字线段的每个单元，而同一字线的其他段未被编程。 随后，附加段被类似地编程。 使用单一读取方案，从部分编程的字线（使用编程和未编程段的混合）读取数据。
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公开(公告)号：US08902661B1
公开(公告)日：2014-12-02
申请号：US14283912
申请日：2014-05-21
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Alexander Kwok-Tung Mak , Pao-Ling Koh
IPC: G11C16/04 , G11C16/10 , G11C29/00 , G11C16/26 , H01L27/115
CPC classification number: G11C29/08 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C29/00 , G11C29/021 , G11C29/028 , H01L27/115 , H01L27/1157 , H01L27/11582
Abstract: Memory hole diameter in a three dimensional memory array may be calculated from characteristics that are observed during programming. Suitable operating parameters may be selected for operating a block based on memory hole diameters. Hot counts of blocks may be adjusted according to memory hole size so that blocks that are expected to fail earlier because of small memory holes are more lightly used than blocks with larger memory holes.
Abstract translation: 三维存储器阵列中的存储孔直径可以根据在编程期间观察到的特性来计算。 可以选择合适的操作参数来基于存储器孔直径操作块。 可以根据存储器孔尺寸来调整块的热计数，使得由于小的存储器孔而预期更早失效的块比具有较大存储器孔的块更轻易地使用。
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公开(公告)号：US20150162088A1
公开(公告)日：2015-06-11
申请号：US14101992
申请日：2013-12-10
Applicant: SanDisk Technologies Inc.
Inventor： Gautam A. Dusija , Yingda Dong , Chris Avila , Deepak Raghu , Pao-Ling Koh
CPC classification number: G11C16/107 , G06F11/1068 , G06F12/0246 , G06F2212/7207 , G06F2212/7211 , G11C16/0408 , G11C16/0466 , G11C16/0483 , G11C16/3418 , G11C16/3422
Abstract: In a three-dimensional NAND memory in which a block contains multiple separately-selectable sets of strings connected to the same set of bit lines, sets of strings are zoned, and different operating parameters applied to different zones. Operating parameters for a zone are obtained from characterizing a reference set of strings in the zone.
Abstract translation: 在三维NAND存储器中，其中块包含连接到同一组位线的多个可单独选择的字符串组，将字符串组划分，并且不同的操作参数被应用于不同的区域。 区域的操作参数是从区域中的一组参考文献集来表征的。
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Patent Agency Ranking
公开(公告)号：US20150162086A1
公开(公告)日：2015-06-11
申请号：US14097523
申请日：2013-12-05
Applicant: SanDisk Technologies Inc.
Inventor： Gautam A. Dusija , Chris Avila , Deepak Raghu , Yingda Dong , Man Mui , Alexander Kwok-Tung Mak , Pao-Ling Koh
CPC classification number: G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3427 , G11C2211/5646 , G11C2211/5648
Abstract: Multiple bits of data are programmed together to each cell of a segment of a word line while other segments of the same word line are unprogrammed. Subsequently, additional segments are similarly programmed. Data is read from a partially programmed word line (with a mix of programmed and unprogrammed segments) using a single reading scheme.
Abstract translation: 多个数据位被一起编程到一个字线段的每个单元，而同一字线的其他段未被编程。 随后，附加段被类似地编程。 使用单一读取方案，从部分编程的字线（使用编程和未编程段的混合）读取数据。
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公开(公告)号：US09015407B1
公开(公告)日：2015-04-21
申请号：US14289243
申请日：2014-05-28
Applicant: SanDisk Technologies Inc.
Inventor： Gautam A. Dusija , Yingda Dong , Chris Avila , Deepak Raghu , Pao-Ling Koh
CPC classification number: G11C16/107 , G06F11/1068 , G06F12/0246 , G06F2212/7207 , G06F2212/7211 , G11C16/0408 , G11C16/0466 , G11C16/0483 , G11C16/3418 , G11C16/3422
Abstract: In a three-dimensional NAND memory in which a block contains multiple separately-selectable sets of strings connected to the same set of bit lines, sets of strings are zoned, and different operating parameters applied to different zones. Operating parameters for a zone are obtained from characterizing a reference set of strings in the zone.
Abstract translation: 在三维NAND存储器中，其中块包含连接到同一组位线的多个可单独选择的字符串组，将字符串组划分，并且不同的操作参数被应用于不同的区域。 区域的操作参数是从区域中的一组参考文献集来表征的。
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公开(公告)号：US20150006790A1
公开(公告)日：2015-01-01
申请号：US14280282
申请日：2014-05-16
Applicant: SanDisk Technologies Inc.
Inventor： Chris Avila , Gautam A. Dusija , Jian Chen
IPC: G06F12/02
CPC classification number: G06F12/0246 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C29/00 , G11C2211/5621 , G11C2211/5641
Abstract: Data that is stored in a higher error rate format in a 3-D nonvolatile memory is backed up in a lower error rate format. Later, the higher error rate copy is sampled to determine if it is acceptable. A sampling pattern samples all word lines of a string and at least one word line of each string of the block.
Abstract translation: 在3-D非易失性存储器中以较高错误率格式存储的数据以较低的错误率格式进行备份。 之后，对较高的错误率副本进行采样，以确定是否可以接受。 采样模式对字符串的所有字线和块的每个字符串的至少一个字线进行采样。
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公开(公告)号：US09136022B2
公开(公告)日：2015-09-15
申请号：US14285052
申请日：2014-05-22
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Xiying Costa , Pao-Ling Koh
CPC classification number: G11C29/82 , G06F11/108 , G11C16/0483 , G11C16/10 , G11C29/08 , G11C29/822 , G11C29/838 , G11C2029/0411
Abstract: Layers in a multi-layer memory array are categorized according to likely error rates as predicted from their memory hole diameters. Data to be stored along a word line in a high risk layer is subject to a redundancy operation (e.g. XOR) with data to be stored along a word line in a low risk layer so that the risk of both being bad is low.
Abstract translation: 多层存储器阵列中的层根据从其存储孔直径预测的可能的错误率进行分类。 沿着高风险层中的字线存储的数据经受冗余操作（例如XOR），其中数据将沿着低风险层中的字线存储，使得两者的风险都较低。
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公开(公告)号：US20150121156A1
公开(公告)日：2015-04-30
申请号：US14064823
申请日：2013-10-28
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Alexander Kwok-Tung Mak , Pao-Ling Koh
IPC: G11C29/08
CPC classification number: G11C29/08 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C29/00 , G11C29/021 , G11C29/028 , H01L27/115 , H01L27/1157 , H01L27/11582
Abstract: Memory hole diameter in a three dimensional memory array may be calculated from characteristics that are observed during programming. Suitable operating parameters may be selected for operating a block based on memory hole diameters. Hot counts of blocks may be adjusted according to memory hole size so that blocks that are expected to fail earlier because of small memory holes are more lightly used than blocks with larger memory holes.
Abstract translation: 三维存储器阵列中的存储孔直径可以根据在编程期间观察到的特性来计算。 可以选择合适的操作参数来基于存储器孔直径操作块。 可以根据存储器孔尺寸来调整块的热计数，使得由于小的存储器孔而预期更早失效的块比具有较大存储器孔的块更轻易地使用。
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