Invention Grant
US08902662B2 Memory system having nonvolatile semiconductor memories with control operation having high-current and low-current periods
有权
具有具有高电流和低电流周期的控制操作的非易失性半导体存储器的存储系统
- Patent Title: Memory system having nonvolatile semiconductor memories with control operation having high-current and low-current periods
- Patent Title (中): 具有具有高电流和低电流周期的控制操作的非易失性半导体存储器的存储系统
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Application No.: US13226180Application Date: 2011-09-06
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Publication No.: US08902662B2Publication Date: 2014-12-02
- Inventor: Hitoshi Shiga , Masahiro Yoshihara
- Applicant: Hitoshi Shiga , Masahiro Yoshihara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-199381 20100906
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/30 ; G11C16/10
Abstract:
According to one embodiment, a memory system includes a first nonvolatile semiconductor memory, a second nonvolatile semiconductor memory and a controller. The first memory has memory cells and executes a first operation that is at least one of write, read, and erase operations with respect to the memory cells. The first operation includes a first sub-operation and a second-sub operation that consume a current which is equal to or higher than a predetermined current. The second memory has memory cells and executes a second operation that is at least one of write, read, and erase operations with respect to the memory cells. The second operation includes a third sub-operation and a fourth sub-operation that consume a current which is equal to or higher than the predetermined current. The controller controls the first operation and the second operation of the first memory and the second memory.
Public/Granted literature
- US20120063234A1 MEMORY SYSTEM HAVING NONVOLATILE SEMICONDUCTOR MEMORIES Public/Granted day:2012-03-15
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