Invention Grant
- Patent Title: Patterning process for oxide film
- Patent Title (中): 氧化膜图案化工艺
-
Application No.: US13942162Application Date: 2013-07-15
-
Publication No.: US08906247B2Publication Date: 2014-12-09
- Inventor: Chin-Ching Lin , Yu-Chun Chen , En-Kuang Wang , Mei-Ching Chiang , Yi-Chen Chen
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101127561A 20120731
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/027

Abstract:
The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate.
Public/Granted literature
- US20140034605A1 PATTERNING PROCESS FOR OXIDE FILM Public/Granted day:2014-02-06
Information query